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Excitation energy-dependent nature of Raman scattering spectrum in GaInNAs/GaAs quantum well structures

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Excitation Energy-Dependent Nature Of Raman Scattering Spectrum In GaınnasGaas Quantum Well Structures.pdf (1.008Mb)
Author
Erol, Ayşe
Akalın, Elif
Sarcan, Fahrettin
Dönmez, Ömer
Akyüz, Sevim
Arıkan, Mehmet Çetin
Puustinen, Janne
Guina, Mircea
Type
Article
Date
2012-11-28
Language
en_US
Metadata
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Abstract
The excitation energy-dependent nature of Raman scattering spectrum, vibration, electronic or both, has been studied using different excitation sources on as-grown and annealed n- and p-type modulation-doped Ga1 -aEuro parts per thousand x In (x) N (y) As1 -aEuro parts per thousand y /GaAs quantum well structures. The samples were grown by molecular beam technique with different N concentrations (y = 0%, 0.9%, 1.2%, 1.7%) at the same In concentration of 32%. Micro-Raman measurements have been carried out using 532 and 758 nm lines of diode lasers, and the 1064 nm line of the Nd-YAG laser has been used for Fourier transform-Raman scattering measurements. Raman scattering measurements with different excitation sources have revealed that the excitation energy is the decisive mechanism on the nature of the Raman scattering spectrum. When the excitation energy is close to the electronic band gap energy of any constituent semiconductor materials in the sample, electronic transition dominates the spectrum, leading to a very broad peak. In the condition that the excitation energy is much higher than the band gap energy, only vibrational modes contribute to the Raman scattering spectrum of the samples. Line shapes of the Raman scattering spectrum with the 785 and 1064 nm lines of lasers have been observed to be very broad peaks, whose absolute peak energy values are in good agreement with the ones obtained from photoluminescence measurements. On the other hand, Raman scattering spectrum with the 532 nm line has exhibited only vibrational modes. As a complementary tool of Raman scattering measurements with the excitation source of 532 nm, which shows weak vibrational transitions, attenuated total reflectance infrared spectroscopy has been also carried out. The results exhibited that the nature of the Raman scattering spectrum is strongly excitation energy-dependent, and with suitable excitation energy, electronic and/or vibrational transitions can be investigated.
Subject
GaInNAs
Photoluminescence
Raman
FT-Raman
FT-IR
Local modes
inplane photovoltage
nitrogen
gainasn
alloys
fotolüminesans
yerel modları
düzlem içi photovoltage
azot
alaşımlar
URI
http://hdl.handle.net/11413/1472
Collections
  • Makaleler / Articles [293]
  • WoS Publications [1016]

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Hakkında |Politika | Kütüphane | İletişim | Send Feedback | Admin

Istanbul Kültür University, Ataköy Campus E5 Karayolu Üzeri Bakırköy 34158, İstanbul / TURKEY
Copyright © İstanbul Kültür University

Creative Commons Lisansı
IKU Institutional Repository, Creative Commons Alıntı-GayriTicari-Türetilemez 4.0 Uluslararası Lisansı ile lisanslanmıştır.

Designed by  UNIREPOS