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dc.contributor.authorÖzer, Mehmet
dc.contributor.authorKayahan, Ersin
dc.contributor.authorOral, Zehra Banu
dc.date.accessioned2017-10-20T12:43:29Z
dc.date.available2017-10-20T12:43:29Z
dc.date.issued2012-01
dc.identifier.issn0587-4246
dc.identifier.urihttp://hdl.handle.net/11413/1739
dc.description.abstractIn this study, change in the intensity and stability of photoluminescence obtained by porous silicon were investigated with illumination time and metallization state. The porous silicon samples were metallized by immersing into solutions containing 3 mM LiNO3, KNO3 and NaNO3 metal salts using immersing plating method. The surface bond configurations of porous silicon were monitored by the Fourier transmission infrared spectroscopy and the results showed that the surfaces of the samples were oxidized after the metallization. The photoluminescence intensity increased after certain critical immersion times and photoluminescence spectrum shifted towards the high energy region after the metallization. Photoluminescence intensity of metallized porous silicon samples was more stable than as-anodized porous silicon samples. The experimental results suggested the possibility that oxygen and/or alkali metal (Li, K and Na) passivation of porous silicon surface could be a suitable way to obtain an efficient and stabilized photoluminescence.tr_TR
dc.language.isoen_UStr_TR
dc.publisherPolish Acad Sciences Inst Physics, Al Lotnikow 32-46, Pl-02-668 Warsaw, Polandtr_TR
dc.relationActa Physica Polonica Atr_TR
dc.subjectPhotoluminescencetr_TR
dc.subjectFotolüminesanstr_TR
dc.titleEffects of Alkali Metallization on the Luminescence Degradation of Porous Silicontr_TR
dc.typeArticletr_TR
dc.contributor.authorID120515tr_TR
dc.contributor.authorID2509tr_TR
dc.contributor.authorID54063tr_TR
dc.identifier.wos299603000088
dc.identifier.wos299603000088en
dc.identifier.scopus2-s2.0-84856093676
dc.identifier.scopus2-s2.0-84856093676en


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