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Chaotic Behavior of the Forward I-V Characteristic of the Al/a-SiC:H/c-Si(n) Heterojunction

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Author
Özer, Mehmet
Hanias, M. P.
Magafas, L.
Stavrinides, S. G.
Papadopoulou, P.
Type
Article
Date
2013
Language
en_US
Metadata
Show full item record
Abstract
In this paper the electrical behavior of the Al/a-SiC:H/c-Si(n) heterojunction for different values of density of gap states (N) in a-SiC:H,is simulated and studied. It is observed that as the density of gap states in a-SiC: H increases from 10(-15) cm(-3) to 10(-18) cm(-3) the I-V characteristics, in the forward bias, present a deviation from the typical I-V of a diode, which is enhanced with the increase of N. For N D 10(-18) cm(-3) the forward I-V characteristic shows strong chaotic vibration that is attributed to the tunneling effect taking place in the junction a-SiC:H/c-Si(n) in the forward bias. With the method of delays correlation and minimum embedding dimension are calculated, while the influence of gap states in strengthening chaos is studied.
Subject
Physics, Mathematical
URI
https://doi.org/10.1007/978-3-642-33914-1_66
https://hdl.handle.net/11413/2398
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  • Makaleler / Articles [293]

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Istanbul Kültür University, Ataköy Campus E5 Karayolu Üzeri Bakırköy 34158, İstanbul / TURKEY
Copyright © İstanbul Kültür University

Creative Commons Lisansı
IKU Institutional Repository, Creative Commons Alıntı-GayriTicari-Türetilemez 4.0 Uluslararası Lisansı ile lisanslanmıştır.

Designed by  UNIREPOS