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  • İKÜ Güncesi Fen ve Mühendislik Bilimleri / Journal of İstanbul Kültür University Science and Engineering
  • Cilt 4, Sayı 2, Temmuz 2006
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  • İKÜ Dergiler / IKU Journals
  • İKÜ Güncesi Fen ve Mühendislik Bilimleri / Journal of İstanbul Kültür University Science and Engineering
  • Cilt 4, Sayı 2, Temmuz 2006
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Spatio-Temporal Patterns In A Semiconductor-Gas-Discharge System: Numerical Solutions And Stability Analysis In 3D Geometry

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Author
Rafatov, İsmail
Type
Article
Date
2006-07
Language
en_US
Metadata
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Abstract
We investigated the spatio-temporal patterns formation in the semiconductor-gas-discharge sys-tem consisting of a short gas-discharge layer sandwiced with a semiconductor layer between planar electrodes to which a de voltage is applied, in three spatial dimensions. We define the model, identify its independent dimensionless parameters, and then present the results of the full time-dependent numerical solutions of the model as well as well of a linear stability analysis of the stationary state. Nuremical solutions and the results of the stability analysis agree well. Numerical results Show that at parameter regime we investigated either purely Hopf bifurcation or Turing-Hopf bifurcation takes place.
Subject
Pattern Formation
Stability Analysis
Barrier Discharge
Modeling
Numerical Solution
Model Oluşturma
Kararlılık Analizi
Bariyer Deşarj
Modelleme
Sayısal Çözüm
URI
http://hdl.handle.net/11413/377
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  • Cilt 4, Sayı 2, Temmuz 2006 [24]

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İstanbul Kültür University

Hakkında |Politika | Kütüphane | İletişim | Send Feedback | Admin

Istanbul Kültür University, Ataköy Campus E5 Karayolu Üzeri Bakırköy 34158, İstanbul / TURKEY
Copyright © İstanbul Kültür University

Creative Commons Lisansı
IKU Institutional Repository, Creative Commons Alıntı-GayriTicari-Türetilemez 4.0 Uluslararası Lisansı ile lisanslanmıştır.

Designed by  UNIREPOS