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dc.contributorFen Edebiyat Fakültesi / Faculty of Letters and Sciences Fizik / Physicstr_TR
dc.contributor.authorÖzer, Mehmet
dc.contributor.authorParaskevopoulos, K. M.
dc.contributor.authorAnagnostopoulos, A. N.
dc.contributor.authorKokkou, S.
dc.contributor.authorPolychroniadis, E. K.
dc.date.accessioned2018-12-27T13:54:39Z
dc.date.available2018-12-27T13:54:39Z
dc.date.issued1998
dc.identifier13tr_TR
dc.identifier13tr_TR
dc.identifier13tr_TR
dc.identifier.issn0268-1242
dc.identifier.urihttps://doi.org/10.1088/0268-1242/13/1/013
dc.identifier.urihttps://hdl.handle.net/11413/4186
dc.description.abstractLarge single crystals of the family of layered compounds - were grown by the Bridgman-Stockbarger method for x = 0.0, 0.25, 0.50, 0.75 and 1.0. The structures of the as-grown single crystals were determined by x-ray diffraction and the lattice parameters and unit cell volumes were obtained. Infrared reflectivity measurements were also performed in the range 600-. From the analysis, the parameters , and were calculated. The electrical resistivities and (parallel and perpendicular to the layers, respectively) were measured as a function of temperature. From the measurements the plot of the Debye temperature versus x was calculated. An attempt was also made to correlate these physical properties with the compositional parameter x.tr_TR
dc.language.isoen_UStr_TR
dc.relationSemiconductor Science and Technologytr_TR
dc.titleSingle crystal growth and characterization of (TlBiSe2)1_ x-(TlBiS2)x narrow gap mixed crystalstr_TR
dc.typeArticletr_TR
dc.contributor.authorID2509tr_TR


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