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The Influence of Tl4Bi2S5 Precipitates on the Crystalline TlBiS2 Properties

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Author
Özer, Mehmet
Kalkan, N
Kyritsi, KG
Paraskevopoulos, KM
Anagnostopoulos, AN
Stergioudis, G
Polychroniadis, EK
Type
Article
Date
2002-09-16
Language
en_US
Metadata
Show full item record
Abstract
Crystalline TlBiS2 having homogeneously distributed Tl4Bi2S5 precipitates was grown by the vertical Bridgman technique in a two-step procedure. X-rays and Transmission Electron Microscopy (TEM) studies were used to identify the as-grown material whereas a Scanning Electron Microscopy (SEM) examination revealed its layered structure. The electrical conductivity a was measured both along (sigma(parallel to)) and across (sigma(perpendicular to)) its layers. IR reflectivity measurements were also performed and the plasma minimum was determined. Both electrical and optical characterization show properties similar to those of TlBiS2 but a reduced N/m* ratio and an irregular voltage oscillation in the I-U characteristics were deduced. Combining the results from these investigations a possible explanation was proposed.
Subject
optical properties
single crystals
semiconductor
density
Growth
states
optik özellikler
tek kristaller
yarıiletken
yoğunluk
büyüme
derece
URI
http://hdl.handle.net/11413/826
Collections
  • Makaleler / Articles [293]
  • Makaleler / Articles [209]
  • Scopus Publications [724]
  • WoS Publications [1016]

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İstanbul Kültür University

Hakkında |Politika | Kütüphane | İletişim | Send Feedback | Admin

Istanbul Kültür University, Ataköy Campus E5 Karayolu Üzeri Bakırköy 34158, İstanbul / TURKEY
Copyright © İstanbul Kültür University

Creative Commons Lisansı
IKU Institutional Repository, Creative Commons Alıntı-GayriTicari-Türetilemez 4.0 Uluslararası Lisansı ile lisanslanmıştır.

Designed by  UNIREPOS